NVD360N65S3T4G onsemi
Hersteller: onsemiDescription: SF3 EASY AUTO 360MOHM DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.43 EUR |
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Technische Details NVD360N65S3T4G onsemi
Description: SF3 EASY AUTO 360MOHM DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote NVD360N65S3T4G nach Preis ab 1.45 EUR bis 4.28 EUR
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NVD360N65S3T4G | Hersteller : onsemi |
Description: SF3 EASY AUTO 360MOHM DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7271 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVD360N65S3T4G | Hersteller : onsemi |
MOSFETs SF3 EASY AUTO 360MOHM DPAK |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVD360N65S3T4G | Hersteller : ON Semiconductor |
NVD360N65S3T4G |
Produkt ist nicht verfügbar |
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| NVD360N65S3T4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 25A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVD360N65S3T4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 25A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |