NVD5867NLT4G-TB01 onsemi

Description: MOSFET N-CH 60V 6A/22A DPAK-3, Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.