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NVD5890NLT4G-VF01

NVD5890NLT4G-VF01 onsemi


Hersteller: onsemi
Description: NFET DPAK 40V 123A 3.7MOH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
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Technische Details NVD5890NLT4G-VF01 onsemi

Description: NFET DPAK 40V 123A 3.7MOH, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Power Dissipation (Max): 4W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V.

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NVD5890NLT4G-VF01 NVD5890NLT4G-VF01 Hersteller : ON Semiconductor NVD5890NL-D-1381937.pdf MOSFET NFET DPAK 40V 123A 3.7MOH
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