NVD5C688NLT4G ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 77A
Power dissipation: 9W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27.4mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1718 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 54+ | 1.33 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.19 EUR |
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Technische Details NVD5C688NLT4G ONSEMI
Description: MOSFET N-CHANNEL 60V 17A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVD5C688NLT4G nach Preis ab 1.14 EUR bis 2.46 EUR
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NVD5C688NLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 77A Power dissipation: 9W Case: DPAK Gate-source voltage: ±16V On-state resistance: 27.4mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1718 Stücke: Lieferzeit 14-21 Tag (e) |
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NVD5C688NLT4G | Hersteller : onsemi |
Description: MOSFET N-CHANNEL 60V 17A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2325 Stücke: Lieferzeit 10-14 Tag (e) |
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NVD5C688NLT4G | Hersteller : onsemi |
MOSFET T6 60V LL DPAK |
auf Bestellung 8340 Stücke: Lieferzeit 10-14 Tag (e) |
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NVD5C688NLT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NVD5C688NLT4G | Hersteller : onsemi |
Description: MOSFET N-CHANNEL 60V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |