NVD6416ANLT4G-001 ON Semiconductor

Description: MOSFET N-CH 100V 19A DPAK-3, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DPAK-3, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Qualification: AEC-Q101, Grade: Automotive.