NVDSH50120C onsemi

Description: DIODE SIL CARB 1.2KV 53A TO247-2, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 53A, Capacitance @ Vr, F: 3691pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.