NVE4153NT1G
Produktcode: 183802
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Lieblingsprodukt
Hersteller:
Gehäuse: SC-89
Uds,V: 20 V
Idd,A: 0,915 A
Rds(on), Ohm: 230 mOhm
Ciss, pF/Qg, nC: 110/
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote NVE4153NT1G nach Preis ab 0.21 EUR bis 1.18 EUR
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NVE4153NT1G | onsemi |
Description: MOSFET N-CH 20V 915MA SC89 Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVE4153NT1G | onsemi |
MOSFETs NFET SC89 20V 915MA 230MO |
auf Bestellung 5872 Stücke: Lieferzeit 10-14 Tag (e) |
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NVE4153NT1G | onsemi |
Description: MOSFET N-CH 20V 915MA SC89 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 54376 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVE4153NT1G | ON Semiconductor |
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auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVE4153NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 20V 915MA SC89
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.24 EUR |
| 15000+ | 0.23 EUR |
| 21000+ | 0.22 EUR |
| 30000+ | 0.21 EUR |
| NVE4153NT1G |
|
Hersteller: onsemi
MOSFETs NFET SC89 20V 915MA 230MO
MOSFETs NFET SC89 20V 915MA 230MO
auf Bestellung 5872 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.69 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.28 EUR |
| 6000+ | 0.25 EUR |
| NVE4153NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 20V 915MA SC89
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 54376 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| NVE4153NT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 70 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH