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NVF2955T1G

NVF2955T1G onsemi

ntf2955-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.85 EUR
2000+0.78 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVF2955T1G onsemi

Description: MOSFET P-CH 60V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-223 (TO-261), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVF2955T1G nach Preis ab 0.87 EUR bis 2.24 EUR

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NVF2955T1G NVF2955T1G ONSEMI NTF2955.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
68+1.06 EUR
82+0.87 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
NVF2955T1G NVF2955T1G onsemi ntf2955-d.pdf Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2271 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
12+1.54 EUR
100+1.15 EUR
500+0.93 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVF2955T1G ON-Semiconductor ntf2955-d.pdf Transistor P-Channel MOSFET; 60V; 20V; 185mOhm; 2,6A; 2,3W; -55°C ~ 175°C; NVF2955T1G TNVF2955t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.61 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
NVF2955T1G NTF2955.PDF
NVF2955T1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
68+1.06 EUR
82+0.87 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
NVF2955T1G ntf2955-d.pdf
NVF2955T1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.54 EUR
100+1.15 EUR
500+0.93 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVF2955T1G ntf2955-d.pdf
Hersteller: ON-Semiconductor
Transistor P-Channel MOSFET; 60V; 20V; 185mOhm; 2,6A; 2,3W; -55°C ~ 175°C; NVF2955T1G TNVF2955t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.61 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH