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NVGS3130NT1G

NVGS3130NT1G onsemi

ntgs3130n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 20V 4.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.75 EUR
6000+0.71 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVGS3130NT1G onsemi

Description: MOSFET N-CH 20V 4.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V, Qualification: AEC-Q101.

Weitere Produktangebote NVGS3130NT1G nach Preis ab 0.85 EUR bis 2.78 EUR

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NVGS3130NT1G NVGS3130NT1G Hersteller : onsemi ntgs3130n-d.pdf Description: MOSFET N-CH 20V 4.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 8996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+1.77 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NVGS3130NT1G Hersteller : ONSEMI ntgs3130n-d.pdf NVGS3130NT1G SMD N channel transistors
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NVGS3130NT1G NVGS3130NT1G Hersteller : ON Semiconductor NTGS3130N-D-1813893.pdf MOSFET NFET TSOP6 20V 5.6A 24MOH
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NVGS3130NT1G NVGS3130NT1G Hersteller : onsemi NTGS3130N_D-2318621.pdf MOSFETs NFET TSOP6 20V 5.6A 24MOH
Produkt ist nicht verfügbar
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