NVGS3130NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 20V 4.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 10+ | 2.26 EUR |
| 50+ | 1.7 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.2 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVGS3130NT1G onsemi
Description: MOSFET N-CH 20V 4.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V, Qualification: AEC-Q101.
Weitere Produktangebote NVGS3130NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NVGS3130NT1G | onsemi |
Description: MOSFET N-CH 20V 4.2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NVGS3130NT1G | ON Semiconductor |
MOSFET NFET TSOP6 20V 5.6A 24MOH |
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Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NVGS3130NT1G | onsemi |
MOSFETs NFET TSOP6 20V 5.6A 24MOH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVGS3130NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 4.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 4.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVGS3130NT1G |
|
Hersteller: ON Semiconductor
MOSFET NFET TSOP6 20V 5.6A 24MOH
MOSFET NFET TSOP6 20V 5.6A 24MOH
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVGS3130NT1G |
|
Hersteller: onsemi
MOSFETs NFET TSOP6 20V 5.6A 24MOH
MOSFETs NFET TSOP6 20V 5.6A 24MOH
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH