Technische Details NVGS3443T1G ON Semiconductor
Description: MOSFET P-CH 20V 3.1A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V, Qualification: AEC-Q101.
Weitere Produktangebote NVGS3443T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVGS3443T1G | Hersteller : ON Semiconductor |
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auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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NVGS3443T1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.1A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V Qualification: AEC-Q101 |
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