NVH4L015N065SC1 onsemi
Hersteller: onsemiDescription: SIC MOS TO247-4L 650V
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 6520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 56 EUR |
| 30+ | 40.75 EUR |
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Technische Details NVH4L015N065SC1 onsemi
Description: SIC MOS TO247-4L 650V, Packaging: Tray, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 142A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L015N065SC1 nach Preis ab 42.63 EUR bis 56.14 EUR
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NVH4L015N065SC1 | Hersteller : onsemi |
SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-4L |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVH4L015N065SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 650V 142A Automotive Tube |
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| NVH4L015N065SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 483A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 16Ω Mounting: THT Gate charge: 283C Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |