auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 90.11 EUR |
| 10+ | 84.09 EUR |
| 30+ | 80.57 EUR |
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Technische Details NVH4L020N090SC1 onsemi
Description: SIC MOSFET 900V TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 60A, 18V, Power Dissipation (Max): 484W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V.
Weitere Produktangebote NVH4L020N090SC1 nach Preis ab 74.86 EUR bis 92.42 EUR
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NVH4L020N090SC1 | Hersteller : onsemi |
 Description: SIC MOSFET 900V TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 60A, 18V Power Dissipation (Max): 484W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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