NVH4L020N090SC1 onsemi
Hersteller: onsemiDescription: SIC MOSFET 900V TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 484W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.57 EUR |
| 10+ | 39.7 EUR |
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Technische Details NVH4L020N090SC1 onsemi
Description: SIC MOSFET 900V TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V, Power Dissipation (Max): 484W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L020N090SC1 nach Preis ab 80.57 EUR bis 90.11 EUR
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NVH4L020N090SC1 | Hersteller : onsemi |
MOSFET SIC MOSFET 900V TO247-4L 20MOHM |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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