NVH4L020N120SC1 onsemi

Description: SICFET N-CH 1200V 102A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V, Power Dissipation (Max): 510W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V, Qualification: AEC-Q101.