auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 80.89 EUR |
| 10+ | 75.06 EUR |
| 25+ | 73.48 EUR |
| 50+ | 72.49 EUR |
| 100+ | 68.87 EUR |
| 450+ | 66.26 EUR |
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Technische Details NVH4L022N120M3S onsemi
Description: SIC MOS TO247-4L 22MOHM 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 352W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V.
Weitere Produktangebote NVH4L022N120M3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NVH4L022N120M3S | Hersteller : ON Semiconductor |
 Silicon Carbide MOSFET,22mohm,1200V |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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NVH4L022N120M3S | Hersteller : onsemi |
Description: SIC MOS TO247-4L 22MOHM 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 352W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
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