NVH4L022N120M3S onsemi

Description: SIC MOS TO247-4L 22MOHM 1200V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.4V @ 20mA, Power Dissipation (Max): 352W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V.