NVH4L025N065SC1 onsemi
Hersteller: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1+ | 55.25 EUR |
| 10+ | 40.36 EUR |
| 450+ | 31.98 EUR |
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Technische Details NVH4L025N065SC1 onsemi
Description: SIC MOS TO247-4L 650V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 99A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 15.5mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L025N065SC1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NVH4L025N065SC1 | onsemi |
SiC MOSFETs SIC MOS TO247-4L 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVH4L025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVH4L025N065SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-4L 650V
SiC MOSFETs SIC MOS TO247-4L 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVH4L025N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH