auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.26 EUR |
| 10+ | 27.09 EUR |
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Technische Details NVH4L030N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L030N120M3S nach Preis ab 24.23 EUR bis 34 EUR
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NVH4L030N120M3S | Hersteller : onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET-ELIPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 18736 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVH4L030N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 73A Automotive 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NVH4L030N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 193A Power dissipation: 156W Case: TO247-4 Gate-source voltage: -3...18V On-state resistance: 58mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVH4L030N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 193A Power dissipation: 156W Case: TO247-4 Gate-source voltage: -3...18V On-state resistance: 58mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |