| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.76 EUR |
| 10+ | 15.73 EUR |
| 120+ | 15.12 EUR |
Produktrezensionen
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Technische Details NVH4L032N065M3S onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 7.5mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L032N065M3S nach Preis ab 13.27 EUR bis 34.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NVH4L032N065M3S | onsemi |
 Description: SIC MOS TO247-4L 32MOHM 650V M3SPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 14289 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L032N065M3S | ONSEMI |
Description: ONSEMI - NVH4L032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 50 A, 650 V, 0.044 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 187W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVH4L032N065M3S |
|
Hersteller: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 14289 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.87 EUR |
| 30+ | 15.78 EUR |
| 120+ | 13.58 EUR |
| 510+ | 13.27 EUR |
| NVH4L032N065M3S |
|
Hersteller: ONSEMI
Description: ONSEMI - NVH4L032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 50 A, 650 V, 0.044 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 187W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - NVH4L032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 50 A, 650 V, 0.044 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 187W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 34.51 EUR |
| 9+ | 27.19 EUR |
| 11+ | 20.62 EUR |
| 50+ | 18.59 EUR |
| 100+ | 15.58 EUR |
| 250+ | 15.23 EUR |