NVH4L040N120M3S onsemi
Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 395 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 81.72 EUR |
30+ | 67.76 EUR |
120+ | 63.52 EUR |
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Technische Details NVH4L040N120M3S onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -3V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L040N120M3S nach Preis ab 54.57 EUR bis 82.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NVH4L040N120M3S | Hersteller : onsemi | MOSFET SIC MOS TO247-4L 40MOHM 1200V M3 |
auf Bestellung 117 Stücke: Lieferzeit 14-28 Tag (e) |
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NVH4L040N120M3S | Hersteller : ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 54A Automotive 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |