auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.81 EUR |
| 10+ | 19.73 EUR |
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Technische Details NVH4L040N120M3S onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -3V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L040N120M3S nach Preis ab 17.34 EUR bis 30.62 EUR
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NVH4L040N120M3S | Hersteller : onsemi |
 Description: SIC MOS TO247-4L 40MOHM 1200V M3Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -3V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 4077 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVH4L040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 54A Automotive 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |