NVH4L040N120SC1 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NVH4L040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 58 A, 1.2 kV, 0.04 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 319W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.04ohm
SVHC: Lead (27-Jun-2024)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 30 EUR |
| 10+ | 27.68 EUR |
| 50+ | 27.66 EUR |
| 100+ | 27.63 EUR |
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Technische Details NVH4L040N120SC1 ONSEMI
Description: ONSEMI - NVH4L040N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 58 A, 1.2 kV, 0.04 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 58A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 319W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: EliteSiC Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.04ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote NVH4L040N120SC1 nach Preis ab 29.7 EUR bis 52.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NVH4L040N120SC1 | onsemi |
SiC MOSFETs SIC MOS TO247-4L 1200V 40MOHM AUTO PART |
auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L040N120SC1 | onsemi |
Description: SICFET N-CH 1200V 58A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVH4L040N120SC1 | ON Semiconductor |
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auf Bestellung 91 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVH4L040N120SC1 |
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Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-4L 1200V 40MOHM AUTO PART
SiC MOSFETs SIC MOS TO247-4L 1200V 40MOHM AUTO PART
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.54 EUR |
| 10+ | 33.78 EUR |
| NVH4L040N120SC1 |
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Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.11 EUR |
| 30+ | 33.57 EUR |
| 120+ | 29.7 EUR |
| NVH4L040N120SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 91 Stücke:
Lieferzeit 21-28 Tag (e)