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NVH4L045N065SC1

NVH4L045N065SC1 onsemi

nvh4l045n065sc1-d.pdf Hersteller: onsemi
SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 33 mohm, 650V, M2, TO247-4L
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.6 EUR
10+19.04 EUR
120+18.18 EUR
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Technische Details NVH4L045N065SC1 onsemi

Description: SIC MOS TO247-4L 650V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 8mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V, Qualification: AEC-Q101.

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NVH4L045N065SC1 NVH4L045N065SC1 Hersteller : onsemi nvh4l045n065sc1-d.pdf Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.85 EUR
30+23.35 EUR
120+21.98 EUR
510+19.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVH4L045N065SC1 Hersteller : ON Semiconductor nvh4l045n065sc1-d.pdf SiC MOS TO247-4L 650V
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