NVH4L045N065SC1 onsemi
Hersteller: onsemiMOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 33 mohm, 650V, M2, TO247-4L
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 50.12 EUR |
| 10+ | 47.03 EUR |
| 25+ | 41.54 EUR |
| 50+ | 40.83 EUR |
| 100+ | 38.95 EUR |
| 250+ | 37.52 EUR |
| 450+ | 35.76 EUR |
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Technische Details NVH4L045N065SC1 onsemi
Description: SIC MOS TO247-4L 650V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 8mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V.
Weitere Produktangebote NVH4L045N065SC1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NVH4L045N065SC1 | Hersteller : ON Semiconductor |
SiC MOS TO247-4L 650V |
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NVH4L045N065SC1 | Hersteller : onsemi |
Description: SIC MOS TO247-4L 650V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V |
Produkt ist nicht verfügbar |