auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.13 EUR |
| 10+ | 21.24 EUR |
| 30+ | 20.68 EUR |
| 60+ | 19.52 EUR |
| 120+ | 18.37 EUR |
| 270+ | 17.81 EUR |
| 510+ | 16.65 EUR |
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Technische Details NVH4L070N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 7mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L070N120M3S nach Preis ab 15.39 EUR bis 27.05 EUR
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NVH4L070N120M3S | Hersteller : onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET-ELIPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 9162 Stücke: Lieferzeit 10-14 Tag (e) |
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