auf Bestellung 874 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.44 EUR |
| 10+ | 15.05 EUR |
| 120+ | 12.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVH4L075N065SC1 onsemi
Description: SIC MOS TO247-4L 650V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L075N065SC1 nach Preis ab 12.64 EUR bis 21.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVH4L075N065SC1 | Hersteller : onsemi |
 Description: SIC MOS TO247-4L 650VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 19140 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
NVH4L075N065SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 650V 38A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |