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NVH4L160N120SC1

NVH4L160N120SC1 onsemi

NVH4L160N120SC1_D-2319403.pdf Hersteller: onsemi
MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.29 EUR
10+ 16.1 EUR
25+ 15.66 EUR
50+ 14.8 EUR
100+ 13.92 EUR
250+ 13.48 EUR
450+ 12.62 EUR
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Technische Details NVH4L160N120SC1 onsemi

Description: SICFET N-CH 1200V 17.3A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V, Qualification: AEC-Q101.

Weitere Produktangebote NVH4L160N120SC1 nach Preis ab 23.27 EUR bis 33.7 EUR

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NVH4L160N120SC1 NVH4L160N120SC1 Hersteller : onsemi nvh4l160n120sc1-d.pdf Description: SICFET N-CH 1200V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+33.7 EUR
34+ 27.29 EUR
102+ 25.68 EUR
510+ 23.27 EUR
NVH4L160N120SC1 NVH4L160N120SC1 Hersteller : ONSEMI NVH4L160N120SC1-D.PDF Description: ONSEMI - NVH4L160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 17.3 A, 1.2 kV, 0.16 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17.3A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.1V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 111W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.16ohm
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)