NVHL020N090SC1 onsemi
Hersteller: onsemiDescription: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 91.54 EUR |
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Technische Details NVHL020N090SC1 onsemi
Description: SICFET N-CH 900V 118A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V, Power Dissipation (Max): 503W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL020N090SC1 nach Preis ab 106.24 EUR bis 123.92 EUR
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NVHL020N090SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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NVHL020N090SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |