NVHL020N120SC1 ON Semiconductor
Hersteller: ON SemiconductorTrans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 50.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVHL020N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 103A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL020N120SC1 nach Preis ab 50.94 EUR bis 86.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVHL020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
NVHL020N120SC1 | Hersteller : onsemi |
Description: SICFET N-CH 1200V 103A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 535W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 922 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
NVHL020N120SC1 | Hersteller : onsemi |
SiC MOSFETs 20MW 1200V |
auf Bestellung 1018 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
|
NVHL020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
NVHL020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
| NVHL020N120SC1 | Hersteller : ON Semiconductor |
|
auf Bestellung 704 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||
| NVHL020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||
|
|
NVHL020N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||
| NVHL020N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 267A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 267A Power dissipation: 267W Case: TO247-3 On-state resistance: 50mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: -5...20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||
| NVHL020N120SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 267A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 267A Power dissipation: 267W Case: TO247-3 On-state resistance: 50mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: -5...20V |
Produkt ist nicht verfügbar |