NVHL020N120SC1 ON Semiconductor
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
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Technische Details NVHL020N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 103A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 103A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL020N120SC1 nach Preis ab 62.03 EUR bis 105.21 EUR
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NVHL020N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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NVHL020N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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NVHL020N120SC1 | onsemi |
Description: SICFET N-CH 1200V 103A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 535W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL020N120SC1 | onsemi |
SiC MOSFETs 20MW 1200V |
auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL020N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVHL020N120SC1 | ON Semiconductor |
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auf Bestellung 704 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVHL020N120SC1 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 62.03 EUR |
| NVHL020N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 71.09 EUR |
| NVHL020N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 103A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 103A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 88.51 EUR |
| 30+ | 62.82 EUR |
| NVHL020N120SC1 |
|
Hersteller: onsemi
SiC MOSFETs 20MW 1200V
SiC MOSFETs 20MW 1200V
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 94.25 EUR |
| 10+ | 65.06 EUR |
| NVHL020N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 103A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 105.21 EUR |
| 5+ | 103.01 EUR |
| NVHL020N120SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 704 Stücke:
Lieferzeit 21-28 Tag (e)