auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.2 EUR |
| 10+ | 16.4 EUR |
| 120+ | 16.39 EUR |
| 270+ | 14.66 EUR |
| 510+ | 13.5 EUR |
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Technische Details NVHL060N065SC1 onsemi
Description: SIC MOS TO247-3L 650V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 6.5mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL060N065SC1 nach Preis ab 13.65 EUR bis 25.27 EUR
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NVHL060N065SC1 | Hersteller : onsemi |
 Description: SIC MOS TO247-3L 650VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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