Weitere Produktangebote NVHL080N120SC1 nach Preis ab 14.74 EUR bis 24.32 EUR
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NVHL080N120SC1 | onsemi |
 Description: SICFET N-CH 1200V 44A TO247-3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -15V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 134411 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL080N120SC1 | onsemi |
SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A |
auf Bestellung 1182 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVHL080N120SC1 | ON Semiconductor |
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auf Bestellung 116 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVHL080N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 44A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 44A TO247-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -15V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 134411 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.89 EUR |
| 10+ | 15.53 EUR |
| 450+ | 14.74 EUR |
| NVHL080N120SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A
SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A
auf Bestellung 1182 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 24.32 EUR |
| 10+ | 17.56 EUR |
| 120+ | 16.6 EUR |
| 510+ | 15.84 EUR |
| NVHL080N120SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 116 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH