auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.53 EUR |
| 10+ | 7.18 EUR |
| 120+ | 6.92 EUR |
| 510+ | 6.78 EUR |
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Technische Details NVHL082N65S3HF onsemi
Description: SUPERFER3 FRFET AUTOMOTIVE 82MOH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3627 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVHL082N65S3HF nach Preis ab 6.78 EUR bis 12.69 EUR
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NVHL082N65S3HF | Hersteller : onsemi |
 Description: SUPERFER3 FRFET AUTOMOTIVE 82MOHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3627 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6258 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL082N65S3HF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 40A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVHL082N65S3HF | Hersteller : ON Semiconductor |
N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| NVHL082N65S3HF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |