NVJD4401NT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.33 EUR |
| 15000+ | 0.32 EUR |
| 21000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVJD4401NT1G onsemi
Description: ONSEMI - NVJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.375 ohm, tariffCode: 85412100, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 630mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 630mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 550mW, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.375ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 550mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote NVJD4401NT1G nach Preis ab 0.35 EUR bis 1.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NVJD4401NT1G | onsemi |
MOSFETs NFET SC88 20V 630MA 375MO |
auf Bestellung 7925 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD4401NT1G | onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88 Drain to Source Voltage (Vdss): 20V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Current - Continuous Drain (Id) @ 25°C: 630mA |
auf Bestellung 42376 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD4401NT1G | ONSEMI |
Description: ONSEMI - NVJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.375 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 550mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.375ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 550mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2643 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVJD4401NT1G |
|
Hersteller: onsemi
MOSFETs NFET SC88 20V 630MA 375MO
MOSFETs NFET SC88 20V 630MA 375MO
auf Bestellung 7925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.37 EUR |
| 6000+ | 0.35 EUR |
| NVJD4401NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Description: MOSFET 2N-CH 20V 0.63A SC88
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
auf Bestellung 42376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 22+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| NVJD4401NT1G |
|
Hersteller: ONSEMI
Description: ONSEMI - NVJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.375 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 630mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 630mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 550mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.375ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 550mW
Betriebstemperatur, max.: 150°C
Description: ONSEMI - NVJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.375 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 630mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 630mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 550mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.375ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 550mW
Betriebstemperatur, max.: 150°C
auf Bestellung 2643 Stücke:
Lieferzeit 14-21 Tag (e)