NVJD5121NT1G-M06 onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| 21000+ | 0.11 EUR |
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Technische Details NVJD5121NT1G-M06 onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 295mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote NVJD5121NT1G-M06 nach Preis ab 0.11 EUR bis 0.67 EUR
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NVJD5121NT1G-M06 | onsemi |
Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 39910 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| NVJD5121NT1G-M06 | onsemi |
RF MOSFET Transistors NFET SC88 60V 295MA 1.6OH |
auf Bestellung 29550 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVJD5121NT1G-M06 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 39910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 43+ | 0.41 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| NVJD5121NT1G-M06 |
|
Hersteller: onsemi
RF MOSFET Transistors NFET SC88 60V 295MA 1.6OH
RF MOSFET Transistors NFET SC88 60V 295MA 1.6OH
auf Bestellung 29550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.41 EUR |
| 100+ | 0.19 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.13 EUR |
| 9000+ | 0.11 EUR |