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NVJD5121NT1G

NVJD5121NT1G onsemi

ntjd5121n-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVJD5121NT1G onsemi

Description: MOSFET 2N-CH 60V 0.295A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 295mA, Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVJD5121NT1G nach Preis ab 0.12 EUR bis 0.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVJD5121NT1G NVJD5121NT1G ONSEMI ntjd5121n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Drain current: 0.212A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.32 EUR
321+0.26 EUR
363+0.24 EUR
511+0.17 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 264 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT1G NVJD5121NT1G onsemi C60A644EE3CEB23315247D71166053F973BDA7D91297199DFBE9A94D7D54454A.pdf MOSFETs NFET SC88 60V 295MA 1.6OH
auf Bestellung 43645 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.39 EUR
16+0.21 EUR
100+0.17 EUR
3000+0.13 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT1G NVJD5121NT1G onsemi ntjd5121n-d.pdf Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20907 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT1G ntjd5121n-d.pdf
NVJD5121NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Kind of channel: enhancement
Drain current: 0.212A
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
264+0.32 EUR
321+0.26 EUR
363+0.24 EUR
511+0.17 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 264 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT1G C60A644EE3CEB23315247D71166053F973BDA7D91297199DFBE9A94D7D54454A.pdf
NVJD5121NT1G
Hersteller: onsemi
MOSFETs NFET SC88 60V 295MA 1.6OH
auf Bestellung 43645 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+0.39 EUR
16+0.21 EUR
100+0.17 EUR
3000+0.13 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVJD5121NT1G ntjd5121n-d.pdf
NVJD5121NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20907 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH