NVJS4151PT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.2A SC88
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
| 21000+ | 0.26 EUR |
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Technische Details NVJS4151PT1G onsemi
Description: MOSFET P-CH 20V 3.2A SC88, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVJS4151PT1G nach Preis ab 0.32 EUR bis 1.39 EUR
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NVJS4151PT1G | onsemi |
Description: MOSFET P-CH 20V 3.2A SC88 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 65842 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJS4151PT1G | onsemi |
MOSFETs 20V 4.2A 60MOHM PFET |
auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVJS4151PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.2A SC88
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.2A SC88
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 65842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 44+ | 0.41 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.32 EUR |
| NVJS4151PT1G |
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Hersteller: onsemi
MOSFETs 20V 4.2A 60MOHM PFET
MOSFETs 20V 4.2A 60MOHM PFET
auf Bestellung 754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.46 EUR |