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NVLJD4007NZTAG onsemi


NVLJD4007NZ_D-2319521.pdf
Hersteller: onsemi
MOSFET NFET WDFN6 30V 1.4 Ohms
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Technische Details NVLJD4007NZTAG onsemi

Description: MOSFET 2N-CH 30V 0.245A 6WDFN, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 6-WDFN (2x2), Vgs(th) (Max) @ Id: 1.5V @ 100µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 245mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 755mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).

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NVLJD4007NZTAG NVLJD4007NZTAG onsemi nvljd4007nz-d.pdf Description: MOSFET 2N-CH 30V 0.245A 6WDFN
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 245mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 755mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTAG nvljd4007nz-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 0.245A 6WDFN
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 245mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 755mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH