NVLJS053N12MCLTAG onsemi

Description: PTNG 120V LL NCH IN UDFN 2.0X2.0, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-UDFN (2x2), Vgs(th) (Max) @ Id: 3V @ 30µA, Power Dissipation (Max): 620mW (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).