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NVLJS053N12MCLTAG onsemi

nvljs053n12mcl-d.pdf Hersteller: onsemi
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
17+1.04 EUR
100+0.72 EUR
500+0.6 EUR
1000+0.51 EUR
Mindestbestellmenge: 15
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Technische Details NVLJS053N12MCLTAG onsemi

Description: PTNG 120V LL NCH IN UDFN 2.0X2.0, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V, Power Dissipation (Max): 620mW (Ta), Vgs(th) (Max) @ Id: 3V @ 30µA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V.

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NVLJS053N12MCLTAG Hersteller : onsemi NVLJS053N12MCL-D.PDF MOSFETs PTNG 120V LL NCH IN UDFN 20X20
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.42 EUR
10+0.99 EUR
100+0.69 EUR
500+0.58 EUR
1000+0.52 EUR
3000+0.48 EUR
6000+0.42 EUR
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NVLJS053N12MCLTAG Hersteller : ON Semiconductor nvljs053n12mcl-d.pdf Power MOSFET, Single N-Channel
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NVLJS053N12MCLTAG Hersteller : ON Semiconductor nvljs053n12mcl-d.pdf Power MOSFET, Single N-Channel Automotive AEC-Q101
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NVLJS053N12MCLTAG Hersteller : onsemi nvljs053n12mcl-d.pdf Description: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH