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NVLJWD040N06CLTAG

NVLJWD040N06CLTAG onsemi

nvljwd040n06cl-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 60V 5.5A 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
6000+0.51 EUR
9000+0.5 EUR
Mindestbestellmenge: 3000
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Technische Details NVLJWD040N06CLTAG onsemi

Description: MOSFET 2N-CH 60V 5.5A 6WDFNW, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 24W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V, Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 13µA, Supplier Device Package: 6-WDFNW (2.2x2.3), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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NVLJWD040N06CLTAG NVLJWD040N06CLTAG Hersteller : onsemi NVLJWD040N06CL-D.PDF MOSFETs MOSFET - Power, Dual N-Channel 60 V, 38 mohm, 18 A
auf Bestellung 2521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.12 EUR
100+0.75 EUR
500+0.67 EUR
1000+0.61 EUR
3000+0.52 EUR
6000+0.51 EUR
Mindestbestellmenge: 2
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NVLJWD040N06CLTAG NVLJWD040N06CLTAG Hersteller : onsemi nvljwd040n06cl-d.pdf Description: MOSFET 2N-CH 60V 5.5A 6WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
14+1.34 EUR
25+1.12 EUR
100+0.87 EUR
250+0.74 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
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NVLJWD040N06CLTAG Hersteller : ON Semiconductor nvljwd040n06cl-d.pdf MOSFET Power Dual N-Channel Automotive AEC-Q101
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NVLJWD040N06CLTAG Hersteller : ONSEMI nvljwd040n06cl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
Produkt ist nicht verfügbar
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