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NVLJWS011N06CLTAG

NVLJWS011N06CLTAG onsemi

nvljws011n06cl-d.pdf Hersteller: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.58 EUR
Mindestbestellmenge: 3000
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Technische Details NVLJWS011N06CLTAG onsemi

Description: T6 60V LL 2X2 WDFNW6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Power Dissipation (Max): 2.9W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 34µA, Supplier Device Package: 6-WDFNW (2.05x2.05), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V, Qualification: AEC-Q101.

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NVLJWS011N06CLTAG NVLJWS011N06CLTAG Hersteller : onsemi nvljws011n06cl-d.pdf Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
13+1.47 EUR
25+1.22 EUR
100+0.95 EUR
250+0.82 EUR
500+0.73 EUR
1000+0.66 EUR
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NVLJWS011N06CLTAG Hersteller : onsemi NVLJWS011N06CL_D-3012044.pdf MOSFETs Single N-Channel wDFNW6 Power MOSFET 60 V, 48 A, 9mohm WDFNW6 (Pb?Free, Wettable Flanks)
auf Bestellung 1321 Stücke:
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Anzahl Preis
2+2.08 EUR
10+1.19 EUR
100+0.80 EUR
500+0.72 EUR
1000+0.66 EUR
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6000+0.52 EUR
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NVLJWS011N06CLTAG Hersteller : ON Semiconductor nvljws011n06cl-d.pdf Single N-Channel MOSFET Automotive AEC-Q101
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NVLJWS011N06CLTAG Hersteller : ONSEMI nvljws011n06cl-d.pdf NVLJWS011N06CLTAG SMD N channel transistors
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