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NVLJWS011N06CLTAG

NVLJWS011N06CLTAG onsemi

nvljws011n06cl-d.pdf Hersteller: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVLJWS011N06CLTAG onsemi

Description: T6 60V LL 2X2 WDFNW6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Power Dissipation (Max): 2.9W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 34µA, Supplier Device Package: 6-WDFNW (2.05x2.05), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVLJWS011N06CLTAG NVLJWS011N06CLTAG Hersteller : onsemi nvljws011n06cl-d.pdf Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
23+0.79 EUR
25+0.71 EUR
100+0.62 EUR
250+0.58 EUR
500+0.56 EUR
1000+0.53 EUR
Mindestbestellmenge: 16
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NVLJWS011N06CLTAG Hersteller : onsemi NVLJWS011N06CL-D.PDF MOSFETs T6 60V LL 2X2 WDFNW6
auf Bestellung 3134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.12 EUR
10+0.72 EUR
100+0.59 EUR
500+0.56 EUR
1000+0.54 EUR
3000+0.49 EUR
6000+0.48 EUR
Mindestbestellmenge: 3
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NVLJWS011N06CLTAG Hersteller : ON Semiconductor nvljws011n06cl-d.pdf Single N-Channel MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
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NVLJWS011N06CLTAG Hersteller : ONSEMI nvljws011n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 233A; 23W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Case: WDFNW6
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 233A
Gate charge: 13.6nC
On-state resistance: 9mΩ
Power dissipation: 23W
Produkt ist nicht verfügbar
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