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NVLJWS022N06CLTAG

NVLJWS022N06CLTAG onsemi

nvljws022n06cl-d.pdf Hersteller: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.41 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVLJWS022N06CLTAG onsemi

Description: T6 60V LL 2X2 WDFNW6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Power Dissipation (Max): 2.4W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2V @ 77µA, Supplier Device Package: 6-WDFNW (2.05x2.05), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVLJWS022N06CLTAG nach Preis ab 0.43 EUR bis 0.95 EUR

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NVLJWS022N06CLTAG NVLJWS022N06CLTAG Hersteller : onsemi nvljws022n06cl-d.pdf Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
27+0.67 EUR
30+0.6 EUR
100+0.52 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAG Hersteller : onsemi nvljws022n06cl-d.pdf MOSFETs T6 60V LL 2X2 WDFNW6
auf Bestellung 1311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.95 EUR
10+0.61 EUR
100+0.5 EUR
500+0.47 EUR
1000+0.46 EUR
3000+0.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAG Hersteller : ONSEMI nvljws022n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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