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NVMFD016N06CT1G

NVMFD016N06CT1G onsemi

NVMFD016N06CD.PDF Hersteller: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.48 EUR
3000+1.41 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFD016N06CT1G onsemi

Description: MOSFET 2N-CH 60V 9A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 36W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V, Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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NVMFD016N06CT1G NVMFD016N06CT1G Hersteller : onsemi NVMFD016N06CD.PDF Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3 EUR
100+2.07 EUR
500+1.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD016N06CT1G NVMFD016N06CT1G Hersteller : onsemi ONSM_S_A0009668179_1-2560360.pdf MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.65 EUR
10+3.13 EUR
100+2.18 EUR
500+1.78 EUR
1500+1.58 EUR
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NVMFD016N06CT1G Hersteller : ON Semiconductor NVMFD016N06CD.PDF
auf Bestellung 1480 Stücke:
Lieferzeit 21-28 Tag (e)
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NVMFD016N06CT1G Hersteller : ON Semiconductor nvmfd016n06c-d.pdf N Channel Power MOSFET
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