auf Bestellung 1500 Stücke:
Lieferzeit 326-340 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.23 EUR |
| 12+ | 4.34 EUR |
| 100+ | 3.46 EUR |
| 250+ | 3.2 EUR |
| 500+ | 2.91 EUR |
| 1000+ | 2.47 EUR |
| 1500+ | 2.36 EUR |
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Technische Details NVMFD016N06CT1G onsemi
Description: MOSFET 2N-CH 60V 9A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 36W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V, Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD016N06CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NVMFD016N06CT1G | Hersteller : ON Semiconductor |
auf Bestellung 1480 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVMFD016N06CT1G | Hersteller : ON Semiconductor |
 N Channel Power MOSFET |
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NVMFD016N06CT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 9A/32A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD016N06CT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 9A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |