Produkte > ONSEMI > NVMFD024N06CT1G
NVMFD024N06CT1G

NVMFD024N06CT1G onsemi

nvmfd024n06c-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+2.45 EUR
3000+ 2.33 EUR
7500+ 2.24 EUR
10500+ 2.17 EUR
Mindestbestellmenge: 1500
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFD024N06CT1G onsemi

Description: MOSFET 2N-CH 60V 8A/24A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V, Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFD024N06CT1G nach Preis ab 2.34 EUR bis 5.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVMFD024N06CT1G NVMFD024N06CT1G Hersteller : onsemi nvmfd024n06c-d.pdf Description: MOSFET 2N-CH 60V 8A/24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.17 EUR
10+ 4.29 EUR
100+ 3.41 EUR
500+ 2.89 EUR
Mindestbestellmenge: 6
NVMFD024N06CT1G NVMFD024N06CT1G Hersteller : onsemi NVMFD024N06C_D-2319756.pdf MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 25500 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.2 EUR
13+ 4.32 EUR
100+ 3.46 EUR
250+ 3.2 EUR
500+ 2.91 EUR
1000+ 2.49 EUR
1500+ 2.34 EUR
Mindestbestellmenge: 10
NVMFD024N06CT1G Hersteller : ON Semiconductor nvmfd024n06c-d.pdf
auf Bestellung 1440 Stücke:
Lieferzeit 21-28 Tag (e)
NVMFD024N06CT1G Hersteller : ON Semiconductor nvmfd024n06c-d.pdf N Channel Power MOSFET
Produkt ist nicht verfügbar