auf Bestellung 7056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 4.58 EUR |
| 100+ | 3.56 EUR |
| 500+ | 3.38 EUR |
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Technische Details NVMFD5C446NLT1G onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.5W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V, Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 90µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD5C446NLT1G nach Preis ab 3.35 EUR bis 8.5 EUR
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NVMFD5C446NLT1G | Hersteller : onsemi |
 Description: MOSFET 2N-CH 40V 25A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 723 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C446NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 25A Automotive 8-Pin DFN EP T/R |
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| NVMFD5C446NLT1G | Hersteller : ONSEMI |
NVMFD5C446NLT1G SMD N channel transistors |
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NVMFD5C446NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 25A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |