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NVMFD5C462NLWFT1G

NVMFD5C462NLWFT1G onsemi

nvmfd5c462nl-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 40V 18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.82 EUR
3000+1.8 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFD5C462NLWFT1G onsemi

Description: MOSFET 2N-CH 40V 18A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 50W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 40µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFD5C462NLWFT1G nach Preis ab 2.09 EUR bis 5.09 EUR

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NVMFD5C462NLWFT1G NVMFD5C462NLWFT1G Hersteller : onsemi nvmfd5c462nl-d.pdf Description: MOSFET 2N-CH 40V 18A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.7 EUR
10+3.1 EUR
100+2.51 EUR
500+2.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C462NLWFT1G NVMFD5C462NLWFT1G Hersteller : onsemi nvmfd5c462nl-d.pdf MOSFETs T6 40V LL S08FL DS
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.09 EUR
10+3.34 EUR
100+2.76 EUR
500+2.52 EUR
1000+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C462NLWFT1G NVMFD5C462NLWFT1G Hersteller : ON Semiconductor NVMFD5C462NL-D-1387900.pdf MOSFET T6 40V LL S08FL DS
auf Bestellung 3318 Stücke:
Lieferzeit 10-14 Tag (e)
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NVMFD5C462NLWFT1G Hersteller : ONSEMI nvmfd5c462nl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 84A; Idm: 311A; 25W; DFN8
Mounting: SMD
Case: DFN8
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 4.7mΩ
Gate-source voltage: ±20V
Drain current: 84A
Drain-source voltage: 40V
Power dissipation: 25W
Pulsed drain current: 311A
Kind of channel: enhancement
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