| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.62 EUR |
| 250+ | 1.58 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.27 EUR |
| 1500+ | 1.18 EUR |
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Technische Details NVMFD5C478NLT1G onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 3.1W (Ta), 23W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Vgs(th) (Max) @ Id: 2.2V @ 20µA, Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVMFD5C478NLT1G nach Preis ab 1.31 EUR bis 3.73 EUR
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NVMFD5C478NLT1G | onsemi |
 Description: MOSFET 2N-CH 40V 10.5A 8DFNPart Status: Active Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3.1W (Ta), 23W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 1294 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C478NLT1G | ON Semiconductor |
MOSFET 40V 14.5 MOHM T8 SO-8FL DUAL DFN-8 |
auf Bestellung 2233 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| NVMFD5C478NLT1G | ON Semiconductor |
|
auf Bestellung 1155 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFD5C478NLT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.1W (Ta), 23W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.1W (Ta), 23W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1294 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.31 EUR |
| NVMFD5C478NLT1G |
|
Hersteller: ON Semiconductor
MOSFET 40V 14.5 MOHM T8 SO-8FL DUAL DFN-8
MOSFET 40V 14.5 MOHM T8 SO-8FL DUAL DFN-8
auf Bestellung 2233 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| NVMFD5C478NLT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 1155 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH