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NVMFD5C674NLT1G

NVMFD5C674NLT1G onsemi

nvmfd5c674nl-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 60V 11A/42A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1434 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 3.81 EUR
100+ 3.04 EUR
500+ 2.57 EUR
Mindestbestellmenge: 6
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Technische Details NVMFD5C674NLT1G onsemi

Description: MOSFET 2N-CH 60V 11A/42A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 37W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V, Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 25µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

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NVMFD5C674NLT1G NVMFD5C674NLT1G Hersteller : ON Semiconductor NVMFD5C674NL_D-2319924.pdf MOSFET T6 60V LL S08FL DS
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NVMFD5C674NLT1G Hersteller : ON Semiconductor nvmfd5c674nl-d.pdf
auf Bestellung 40500 Stücke:
Lieferzeit 21-28 Tag (e)
NVMFD5C674NLT1G NVMFD5C674NLT1G Hersteller : onsemi nvmfd5c674nl-d.pdf Description: MOSFET 2N-CH 60V 11A/42A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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