Produkte > ONSEMI > NVMFD5C680NLT1G
NVMFD5C680NLT1G

NVMFD5C680NLT1G onsemi

nvmfd5c680nl-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.2 EUR
3000+1.13 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFD5C680NLT1G onsemi

Description: MOSFET 2N-CH 60V 7.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 19W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V, Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFD5C680NLT1G nach Preis ab 1.23 EUR bis 3.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFD5C680NLT1G NVMFD5C680NLT1G Hersteller : onsemi NVMFD5C680NL_D-2319494.pdf MOSFET T6 60V LL S08FL DS
auf Bestellung 6000 Stücke:
Lieferzeit 618-622 Tag (e)
Anzahl Preis
2+2.71 EUR
10+2.25 EUR
100+1.8 EUR
250+1.65 EUR
500+1.51 EUR
1000+1.29 EUR
1500+1.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C680NLT1G NVMFD5C680NLT1G Hersteller : onsemi nvmfd5c680nl-d.pdf Description: MOSFET 2N-CH 60V 7.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.27 EUR
100+1.6 EUR
500+1.37 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C680NLT1G Hersteller : ON Semiconductor nvmfd5c680nl-d.pdf
auf Bestellung 540 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C680NLT1G Hersteller : ONSEMI nvmfd5c680nl-d.pdf NVMFD5C680NLT1G SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH