auf Bestellung 7458 Stücke:
Lieferzeit 521-535 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.84 EUR |
| 10+ | 6.11 EUR |
| 100+ | 4.91 EUR |
| 500+ | 4.08 EUR |
| 1000+ | 3.35 EUR |
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Technische Details NVMFD6H840NLT1G onsemi
Description: MOSFET 2N-CH 80V 14A/74A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V, Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 96µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD6H840NLT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFD6H840NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFD6H840NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 14A/74A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD6H840NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 14A/74A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |