NVMFD6H840NLT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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Technische Details NVMFD6H840NLT1G onsemi
Description: ONSEMI - NVMFD6H840NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 74 A, 74 A, 0.0069 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: 74A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 80V, Dauer-Drainstrom Id, n-Kanal: 74A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 90W, Drain-Source-Spannung Vds, n-Kanal: 80V, SVHC: Lead (25-Jun-2025), Bauform - Transistor: DFN, Anzahl der Pins: 8Pin(s), Produktpalette: NVMFD6H840NL Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0069ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 90W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote NVMFD6H840NLT1G nach Preis ab 2.31 EUR bis 7.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NVMFD6H840NLT1G | onsemi |
MOSFETs T8 80V LL SO8FL DS |
auf Bestellung 6197 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD6H840NLT1G | onsemi |
Description: MOSFET 2N-CH 80V 14A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 21010 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD6H840NLT1G | ONSEMI |
Description: ONSEMI - NVMFD6H840NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 74 A, 74 A, 0.0069 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 80V Dauer-Drainstrom Id, n-Kanal: 74A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 90W Drain-Source-Spannung Vds, n-Kanal: 80V SVHC: Lead (25-Jun-2025) Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: NVMFD6H840NL Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0069ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 90W Betriebstemperatur, max.: 175°C |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NVMFD6H840NLT1G | ON Semiconductor |
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auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFD6H840NLT1G |
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Hersteller: onsemi
MOSFETs T8 80V LL SO8FL DS
MOSFETs T8 80V LL SO8FL DS
auf Bestellung 6197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.78 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.12 EUR |
| 250+ | 3.09 EUR |
| 500+ | 2.7 EUR |
| 1000+ | 2.31 EUR |
| NVMFD6H840NLT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.02 EUR |
| 10+ | 4.58 EUR |
| 50+ | 3.53 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.61 EUR |
| NVMFD6H840NLT1G |
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Hersteller: ONSEMI
Description: ONSEMI - NVMFD6H840NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 74 A, 74 A, 0.0069 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 74A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 80V
Dauer-Drainstrom Id, n-Kanal: 74A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 90W
Drain-Source-Spannung Vds, n-Kanal: 80V
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: NVMFD6H840NL Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0069ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 90W
Betriebstemperatur, max.: 175°C
Description: ONSEMI - NVMFD6H840NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 74 A, 74 A, 0.0069 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 74A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 80V
Dauer-Drainstrom Id, n-Kanal: 74A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 90W
Drain-Source-Spannung Vds, n-Kanal: 80V
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: NVMFD6H840NL Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0069ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 90W
Betriebstemperatur, max.: 175°C
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| NVMFD6H840NLT1G |
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Hersteller: ON Semiconductor
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)