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NVMFD6H846NLWFT1G

NVMFD6H846NLWFT1G onsemi

nvmfd6h846nl-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.99 EUR
3000+0.92 EUR
4500+0.90 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFD6H846NLWFT1G onsemi

Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 34W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V, Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 21µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFD6H846NLWFT1G nach Preis ab 1.13 EUR bis 3.29 EUR

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NVMFD6H846NLWFT1G NVMFD6H846NLWFT1G Hersteller : onsemi NVMFD6H846NL_D-2319579.pdf MOSFET MOSFET - Power, Dual N-Channel, 80 V, 15 mohm 31 A NVMFD6H846NL DFN8 (Pb-Free, Wettable Flanks)
auf Bestellung 1480 Stücke:
Lieferzeit 470-474 Tag (e)
Anzahl Preis
2+2.48 EUR
10+2.04 EUR
100+1.59 EUR
500+1.35 EUR
1000+1.19 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H846NLWFT1G NVMFD6H846NLWFT1G Hersteller : onsemi nvmfd6h846nl-d.pdf Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.10 EUR
100+1.42 EUR
500+1.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H846NLWFT1G NVMFD6H846NLWFT1G Hersteller : ON Semiconductor nvmfd6h846nl-d.pdf Trans MOSFET N-CH 80V 9.4A Automotive AEC-Q101 8-Pin DFN EP T/R
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Im Einkaufswagen  Stück im Wert von  UAH