NVMFD6H852NLT1G onsemi

Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL, Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Vgs(th) (Max) @ Id: 2V @ 26µA, Power Dissipation (Max): 3.2W (Ta), 38W (Tc), Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Configuration: 2 N-Channel (Dual), Power - Max: 3.2W (Ta), 38W (Tc), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V.