NVMFS016N06CT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.88 EUR |
| 3000+ | 0.82 EUR |
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Technische Details NVMFS016N06CT1G onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 25µA, Power Dissipation (Max): 3.4W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFS016N06CT1G nach Preis ab 0.81 EUR bis 2.38 EUR
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NVMFS016N06CT1G | onsemi |
MOSFETs Single N-Channel Power MOSFET 60V, 33A, 15.6 mohm SO8FL(Pb-Free) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS016N06CT1G | onsemi |
Description: MOSFET N-CH 60V 10A/33A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N06CT1G | ON Semiconductor |
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auf Bestellung 1480 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS016N06CT1G |
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Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 60V, 33A, 15.6 mohm SO8FL(Pb-Free)
MOSFETs Single N-Channel Power MOSFET 60V, 33A, 15.6 mohm SO8FL(Pb-Free)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.91 EUR |
| 1500+ | 0.81 EUR |
| NVMFS016N06CT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| NVMFS016N06CT1G |
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Hersteller: ON Semiconductor
auf Bestellung 1480 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH