NVMFS016N10MCLT1G onsemi
Hersteller: onsemiDescription: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.72 EUR |
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Technische Details NVMFS016N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V, Power Dissipation (Max): 3.6W (Ta), 64W (Tc), Vgs(th) (Max) @ Id: 3V @ 64µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS016N10MCLT1G nach Preis ab 0.62 EUR bis 2.48 EUR
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NVMFS016N10MCLT1G | Hersteller : onsemi |
MOSFETs MOSFET - Power, Single, N-Channel 100 V, 14 mohm, 46A |
auf Bestellung 10192 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS016N10MCLT1G | Hersteller : onsemi |
Description: PTNG 100V LL SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2674 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N10MCLT1G | Hersteller : ON Semiconductor |
NVMFS016N10MCLT1G |
Produkt ist nicht verfügbar |
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| NVMFS016N10MCLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 10.9A Automotive 5-Pin SO-FL EP T/R |
Produkt ist nicht verfügbar |
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| NVMFS016N10MCLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |