NVMFS025P04M8LT1G ON Semiconductor
auf Bestellung 2582 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 822+ | 0.66 EUR |
| 1000+ | 0.59 EUR |
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Technische Details NVMFS025P04M8LT1G ON Semiconductor
Description: MV8 40V P-CH LL IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V, Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 255µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V.
Weitere Produktangebote NVMFS025P04M8LT1G nach Preis ab 0.47 EUR bis 1.68 EUR
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NVMFS025P04M8LT1G | Hersteller : onsemi |
 MOSFETs Power MOSFET, Single P-Channel, -40 V, 23 mohm, -34.6 A |
auf Bestellung 1777 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS025P04M8LT1G | Hersteller : onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V |
auf Bestellung 1492 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS025P04M8LT1G | Hersteller : ON Semiconductor |
Power MOSFET, Single P-Channel |
Produkt ist nicht verfügbar |
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NVMFS025P04M8LT1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 40V 9.4A 5-Pin SO-FL EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMFS025P04M8LT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -34.6A; Idm: -204A; 22.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -34.6A Pulsed drain current: -204A Power dissipation: 22.1W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVMFS025P04M8LT1G | Hersteller : onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V |
Produkt ist nicht verfügbar |
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| NVMFS025P04M8LT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -34.6A; Idm: -204A; 22.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -34.6A Pulsed drain current: -204A Power dissipation: 22.1W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |